RM9003BS Overview
： Pin OUT GND CS NC Description Drain of built_in MOS Ground for internal circuitry. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maxim rating conditions for extended periods may affect device reliability。 RM9003BS_Rev.22.01 .reactor-micro.
RM9003BS Key Features
- The peripheral circuit is simple, with no
- Multi-chip parallel to do high-power
- The LED current can be set externally
- There is no EMI problem with the chip
- Built-in 500V high-pressure MOS
- The chip has an over-temperature
- Package：ESOP8,SOT89/3,TO252
