R12P21509D Description
High slew rate SiC transistor drivers require an isolated asymmetric supply of +20/-5V or +15/-3V with high isolation voltage and low isolation capacitance. The RxxPxxyyD series have been specially designed to fulfill this demanding requirement with 6400VDC isolation and <10pF isolation capacitance. The load on each output can be unequal, as long as the total power remains under 2W.
R12P21509D Key Features
- +20/-5V & +15/-3V asymmetric outputs for SiC driver
R12P21509D Applications
- Qualified with 65kV/µs @ Vmon mode =1KV
- +15/-9V asymmetric outputs for IGBT driver applications
- Pot-core transformer with separated windings
- High 6.4kVDC isolation in pact SIP7 size