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BAV70W - SWITCHING DIODE

General Description

only.

"Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time.

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Key Features

  • Power dissipation PD: 200 mW (Tamb=25OC).
  • Collector current IO: 150.
  • Collector - base voltage VR: 75 mA (Tamb=25OC) V.
  • Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC.

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Datasheet Details

Part number BAV70W
Manufacturer RECTRON
File Size 367.14 KB
Description SWITCHING DIODE
Datasheet download datasheet BAV70W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-323 PLASTIC ENCAPSULATE SWITCHING DIODE BAV70W FEATURES * Power dissipation PD: 200 mW (Tamb=25OC) * Collector current IO: 150 * Collector - base voltage VR: 75 mA (Tamb=25OC) V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.006 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified. SOT-323 0.006(0.15) 0.003(0.08) 0.053(1.35) 0.045(1.15) 0.043(1.10) 0.035(0.90) REF 0.021(0.53) 0.004(0.10) 0.000(0.00) 0.016(0.40) 0.008(0.20) 0.055(1.40) 0.047(1.20) 0.096(2.45) 0.085(2.15) 0.