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CMPSH-3 - SCHOTTKY DIODE

General Description

only.

"Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time.

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Key Features

  • Power dissipation PD: 350 mW (Tamb=25OC).
  • Forward current IF: 100 mA.
  • Reverse voltage VR: 30 V.
  • Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC.

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Datasheet Details

Part number CMPSH-3
Manufacturer RECTRON
File Size 283.95 KB
Description SCHOTTKY DIODE
Datasheet download datasheet CMPSH-3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 PLASTIC-ENCAPSULATE SCHOTTKY DIODE CMPSH-3 FEATURES * Power dissipation PD: 350 mW (Tamb=25OC) * Forward current IF: 100 mA * Reverse voltage VR: 30 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified.