CMPSH-3 Datasheet | Rectron

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 PLASTIC-ENCAPSULATE SCHOTTKY DIODE Features - Power dissipation PD: 350 m W (Tamb=25OC) - Forward current IF: 100 m A - Reverse voltage VR: 30 V - Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA - Case: Molded plastic - Epoxy: UL 94V-O rate flame retardant - Lead: MIL-STD-202E method 208C guaranteed - Mounting position: Any - Weight: 0.008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. ELECTRICAL CHARACTERISTICS ( @ TA = 25o C unless otherwise noted ) CHARACTERISTICS Reverse Breakdown Voltage (IR=100m A) Reverse voltage leakage current (VR=25V) Reverse voltage leakage current (VR=25V, TA= 100o C) Forward voltage (IF=2m A) Forward voltage (IF=15m A) Forward voltage (IF=100m A) SYMBOL V(BR) IR Diode capacitance (VR=0V, f=1MHz) Reverse recovery time (IF=IR=10m A, IRR=1.0m A, RL=100W) Ctot trr Marking Note 1: "Fully ROHS pliant", "100% Sn plating (Pb-free)". SOT-23 0.055(1.40) 0.047(1.20) 0.006(0.15) 0.003(0.08) 0.020(0.50) 0.012(0.30) 0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.012(0.30) 0.100(2.55)...