QPA3230 Key Features
- Excellent Linearity
- Superior Return Loss
- Optimal Reliability
- Low Noise
- Unconditionally Stable Under
- 22.5dB Min. Gain at 1218MHz
- 480mA Max
- Extra Pin For Current
QPA3230 is GaAs/GaN Power Doubler Hybrid manufactured by RF Micro Devices.
| Part Number | Description |
|---|---|
| QPA3240 | GaAs/GaN Power Doubler Hybrid |
| QPA4263A | DC to 3500MHz CASCADABLE SiGe HBT MMIC AMPLIFIER |
| QPA4363A | CASCADABLE SiGe HBT MMIC AMPLIFIER |
| QPA4463A | CASCADABLE SiGe HBT MMIC AMPLIFIER |
| QPA7489A | CASCADABLE SiGe HBT MMIC AMPLIFIER |
QPA3230 GaAs/GaN Power Doubler Hybrid 45MHz to 1218MHz RFMD + TriQuint = Qorvo QPA3230 The QPA3230 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT die and GaN HEMT die, has extremely high output capability, and is operated from 45MHz to 1218MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability.