RF Micro Devices RF2047
The RF2047 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 Ω gain block. The device is self-contained with 50 Ω input and output impedances and requires only two external DC biasing elements to operate as specified.APPLICATIONS
● Broadband, Low Noise Gain Blocks● IF or RF Buffer Amplifiers
● Driver Stage for Power Amplifiers RF2047 GENERAL PURPOSE AMPLIFIER
● Final PA for Low Power
APPLICATIONS
● High ReliabilityAPPLICATIONS
● Broadband Test Equipment ProductDESCRIPTION
APPLICATIONS
include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. With a goal of enhanced reliability, the extremely small Micro-X ceramic package offers significantly lower thermal resistance than similar size plastic packages. 45° + 1° 4 0.055 + 0.005 0.020 + 0.002 0.040 + 0.002 0.070 sq. NOTES: 1. Shaded lead is pin 1. 2. Darkened areas are metallization. 0.200 sq. Typ Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü Package Style: Micro-X Ceramic GaAs HBT SiGe HBT GaAs MESFET Si CMOSFEATURES
● DC to 6000MHz Operation● Internally matched Input and Output
● 16dB Small Signal Gain
● +26dBm Output IP3 GND 4 MARKING - C7
● +12dBm Output Power
● Ex...