RF Micro Devices RF2105L
The RF2105L is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital cellular phone transmitters or ISM applications requiring linear amplification. It is packaged in a 16-lead ceramic package with a backside ground.| Part No. | RF2105L |
|---|---|
| Datasheet | RF2105L Download |
| Manufacturer |  RF Micro Devices |
| Description | HIGH POWER LINEAR UHF AMPLIFIER |
| Buy | Stock & Price |
APPLICATIONS
● 900 MHz ISM BandAPPLICATIONS
● 400 MHz Industrial Radios● Digital Communication Systems RF2105L HIGH POWER LINEAR UHF AMPLIFIER
● Driver Stage for Higher Power
APPLICATIONS
● Commercial and Consumer Systems● Portable Battery-Powered Equipment 2 POWER AMPLIFIERS Product
DESCRIPTION
The device is self-contained with the exception of the output matching network and power supply feed line. 0.258 0.242 0.150 0.050 1 0.258 0.242 0.075 0.033 0.065 0.017 0.025 0.080 R0.008 0.050 0.208 0.192 sq. 0.022 0.018 0.080 Optimum Technology Matching® Applied Si B
