RF2335 Description
The RF2335 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 Ω gain block. Applications include IF and RF amplification in wireless voice and data munication products operating in frequency bands up to 6000MHz.
RF2335 Key Features
- DC to 6000MHz Operation
- Internally matched Input and Output
- 12dB Small Signal Gain
- +33dBm Output IP3
- +17dBm Output Power
- Good Gain Flatness