RF2335 Datasheet | RF Micro Devices

Typical Applications - Broadband, Low Noise Gain Blocks - IF or RF Buffer Amplifiers - Driver Stage for Power Amplifiers - Final PA for Low Power Applications - Broadband Test Equipment GENERAL PURPOSE AMPLIFIER Product Description The RF2335 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 Ω gain block. Applications include IF and RF amplification in wireless voice and data munication products operating in frequency bands up to 6000MHz. The device is self-contained with 50 Ω input and output impedances and requires only two external DC biasing elements to operate as specified. The RF2335 is available in a very small industry-standard SOT23 5-lead surface mount package, enabling pact designs which conserve board space. 1.60 + 0.01 0.400 GENERAL PURPOSE AMPLIFIERS 0.15 0.05 2.90 + 0.10 2.80 + 0.20 3° MAX 0° MIN 0.45 + 0.10 0.127 1.44 1.04 Dimensions in mm. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ! Package Style: SOT 5 Lead Ga As HBT Si Ge HBT Ga As MESFET Si CMOS Features - DC to 6000MHz Operation - Internally matched Input and Output - 12d B Small Signal Gain - +33d Bm Output IP3 - +17d Bm Output Power - Good Gain Flatness GND 1 GND 2 RF IN...