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RF2376 Datasheet PDF

RF Micro Devices RF2376

The RF2376 is a linear variable gain amplifier suitable for use in TDMA and CDMA systems in the cellular band. The features of this device include linear gain control, high gain, and low noise figure. The IC is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process and is featured in an industry-standard miniature 6-lead plastic SOT package.
Part No. RF2376
Datasheet RF2376 Download
Manufacturer
RF Micro Devices
Description CELLULAR TDMA/CDMA LINEAR VARIABLE GAIN AMPLIFIER
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RF2376 datasheet page 1 preview

APPLICATIONS

● CDMA Cellular Handsets
● TDMA Cellular Handsets RF2376 CELLULAR TDMA/CDMA LINEAR VARIABLE GAIN AMPLIFIER Product

DESCRIPTION

1.80 1.40 .50 .35 3.10 2.70 .10 MAX 4 GENERAL PURPOSE AMPLIFIERS TEXT* 1.90 3.00 2.60 1.30 1.00 .90 .70 9° 1° .25 .10 .37 MIN. All dimensions in mm. *When Pin 1 is in upper left, text reads downward (as shown). Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü Package Style: SOT23-6 GaAs HBT SiGe HBT GaAs MESFET Si CMOS

FEATURES

● 50dB Linear Gain Control Range
● 27dB Maximum Gain
● Single 2.7V to 3.3V Supply
● 30mA Supply Current RF OUT 1 GND 2 GC 3 ATTEN 6 VCC
● High Linearity 5 GND 4 RF IN
● 7dB Noise Figure Ordering Information RF2376 RF2376 PCBA Cellular TDMA/CDMA Linear Variable Gain Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 Rev A2 010829 4-43 RF2376

ABSOLUTE MAXIMUM RATINGS

Parameter Supply Voltage DC Current Operating Ambient Temperature Storage Temperature Preliminary Rating 0 to +5.0 100 -20 to +85 -40 to +150 Unit VDC mA °C °C Caution!
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