RF Micro Devices RF3105
The RF3105 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 824MHz to 849MHz band. The RF3105 has a digital bias control voltage for low current in standby mode.APPLICATIONS
● 3V CDMA/AMPS Cellular Handsets● Spread-Spectrum Systems RF3105 3V 900MHZ LINEAR AMPLIFIER MODULE 2 POWER AMPLIFIERS 4.390 6.0 sq 0.100 Dimensions in mm. Product
DESCRIPTION
The device is self-contained with 50 Ω input and output that is matched to obtain optimum power, efficiency, and linearity characteristics. The module is an ultra-small 6mmx6mm land grid array with backside ground. 3.000 0.100 0.800 sq typ 1.700 2.500 NOTE: Nominal thickness, 1.55 mm. 0.600 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ! Package Style: LGM (6mmx6mm) GaAs HBT SiGe HBT GaAs MESFET Si CMOSFEATURES
● Input/Output Internally Matched @ 50 Ω● Single 3V Supply
● 29dBm Linear Output Power
● 28dB Linear Gain VCC1 1 7 GND RF IN 2 6 RF OUT
● 35% Linear Efficiency VREG 3 4 VMODE 5 VCC2 Ordering Information RF3105 RF3105 PCBA 3V 900MHz Linear Amplifier Module Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Te...