RF Micro Devices RF3117
The RF3117 is a high-power, high-efficiency linear amplifier module targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 824MHz to 849MHz band. The RF3117 has a digital control line for low power application to reduce the current drain.APPLICATIONS
● 3V CDMA/AMPS Cellular Handsets● 3V CDMA2000/1X Cellular Handsets
● Compatible with Qualcomm Chipset
● Spread-Spectrum Systems 2 POWER AMPLIFIERS 4.390 6.0 sq 0.100 Dimensions in mm. Product
DESCRIPTION
The device is self-contained with 50 Ω input and output that is matched to obtain optimum power, efficiency, and linearity characteristics. The module is an ultra-small 6mmx6mm land grid array with backside ground. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS 3.000 0.100 0.800 sq typ 1.700 2.500 NOTE: Nominal thickness, 1.55 mm. 0.600 ü Package Style: LGM (6mmx6mm) GaAs HBT SiGe HBT GaAs MESFET Si CMOSFEATURES
● Input/Output Internally Matched@50 Ω● Single 3V Supply
● 30dBm Linear Output Power
● 30dB Linear Gain VCC1 1 7 GND RF IN 2 6 RF OUT
● 33% Linear Efficiency
● 55mA Idle Current VREG 3 4 VMODE 5 VCC2 Ordering Information RF3117 RF3117 PCBA 3V 900MHz Linear Amplifier Module Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7...