RF Micro Devices RF3300-3
The RF3300-3 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA handheld digital cellular equipment, spreadspectrum systems, and other applications in the 1850MHz to 1910MHz band. The RF3300-3 has a digital control line for low power application to reduce the current drain.| Part No. | RF3300-3 |
|---|---|
| Datasheet | RF3300-3 Download |
| Manufacturer |  RF Micro Devices |
| Description | LINEAR AMPLIFIER MODULE |
| Buy | Stock & Price |
APPLICATIONS
● 3V CDMA US-PCS Handsets● 3V CDMA2000/1X PCS Handsets
● Spread-Spectrum Systems Product
DESCRIPTION
The device is self-contained with 50 Ω input and output that is matched to obtain optimum power, efficiency, and linearity characteristics. This amplifier contains a temperature compensating bias circuit for improved performance over temperature. 7.375 TYP 6.775 6.575 TYP 5.875 TYP 3V 1900MHz LINEAR AMPLIFIER MODULE● Designed for Compatibility with Qualcomm Chipsets 1.625 2.425 3.575 4.375 1 5.075 TYP 4.375 TYP NOTES: Nominal thickness, 1.55 mm. Note orientation of Pin 1. 3.575 TYP 2.875 TYP 2.075 TYP 0.925 TYP 0.125 TYP 0.000 0.125 TYP 0.925 TYP 5.075 TYP 5.875 TYP 0.000 1.750 4.250 Dimensions in mm. Bottom View Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT 9 Package Style: Module (6mmx7.5mm) GaAs HBT SiGe HBT GaN HEMT GaAs MESFET 9SiGe Bi-CMOS Si CMOS
FEATURES
● Single 3V Supply with Internal VREF● Integrated Power Detector
● 25dB Linear Gain
● 40mA...
