RF3806 Datasheet | RF Micro Devices

Features - - - - 4W Output Power High Linearity 1500MHz to 2200MHz Operation 5V to 8V Supply with Adjustable Bias Ga As HBT Linear Amplifier Power Amplifier Stage for mercial Wireless Infrastructure (DCS, PCS, UMTS) VCC1 1 VREF 2 RF IN 3 V_BIAS 4 Bias Circuit 8 RF OUT/VCC2 7 RF OUT/VCC2 6 RF OUT/VCC2 5 RF OUT/VCC2 Applications - - PACKAGE BASE GND Functional Block Diagram Product Description The RF3806 is a Ga As power amplifier, specifically designed for linear applications. Using a highly reliable Ga As HBT fabrication process, this high-performance two-stage amplifier achieves high output power over a broad frequency range. An evaluation board is available to address UMTS2100 applications. Ordering Information RF3806 RF3806PCK-415 Ga As HBT Pre-Driver Amplifier Fully Assembled Evaluation Board - UMTS2100 9Ga As HBT Ga As MESFET In Ga P HBT Optimum Technology Matching® Applied Si Ge Bi CMOS Si Bi CMOS Si Ge HBT Ga As p HEMT Si CMOS Si BJT Ga N HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, Power Star®, POLARIS™ TOTAL RADIO™ and Ultimate Blue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A3 DS070509 7628 Thorndike Road, Greensboro, NC 27409-9421 - For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.. 3-113 GENERAL PURPOSE AMPLIFIERS (LNAs, HPAs, LINEAR AMPS) Absolute Maximum Ratings Parameter Supply Voltage (VCC and VBIAS) Rating 8 2870 23 +85 +125 Unit V m A d Bm °C °C Caution! ESD sensitive device. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No...