RF3809 Datasheet | RF Micro Devices

Features - High Output Power of 2.0W P1d B - High Linearity - High Power-Added Efficiency - Thermally-Enhanced Packaging - Broadband Platform Design Approach, 450 MHz to 2500 MHz Applications - Ga As Pre-Driver for Basestation Amplifiers - PA Stage for mercial Wireless Infrastructure - Class AB Operation for NMT, GSM, DCS, PCS, and UMTS Transceiver Applications - 2nd/3rd Stage LNA for Wireless Infrastructure Functional Block Diagram Product Description The RF3809 is a Ga As pre-driver power amplifier, specifically designed for wireless infrastructure applications. Using a highly reliable Ga As HBT fabrication process, this high-performance single-stage amplifier achieves high output power over a broad frequency range. The RF3809 also provides excellent efficiency and thermal stability through the use of a thermally-enhanced surface-mount plastic-slug package. Ease of integration is acplished through the incorporation of an optimized evaluation board design provided to achieve proper 50 Ω operation. Various evaluation boards are available to address a broad range of wireless infrastructure applications: NMT 450 MHz; GSM850 MHz; GSM900 MHz; DCS1800 MHz; PCS1900 MHz; and, UMTS2200 MHz. Ordering Information RF3809 RF3809PCK-410 RF3809PCK-411 RF3809PCK-412 RF3809PCK-413 RF3809PCK-414 RF3809PCK-415 Ga As HBT Pre-Driver Amplifier Fully Assembled Evaluation Board, 450 MHz Fully Assembled Evaluation Board, 869 MHz to 894 MHz Fully Assembled Evaluation Board, 920 MHz to 960 MHz Fully Assembled Evaluation Board, 1800 MHz to 1880 MHz Fully Assembled Evaluation Board, 1930 MHz to 1990 MHz Fully Assembled Evaluation Board, UMTS Optimum Technology Matching® Applied 9Ga As HBT Si Ge Bi CMOS Ga As p HEMT Ga N HEMT Ga As MESFET Si Bi CMOS Si CMOS RF MEMS In Ga P HBT Si Ge HBT Si BJT LDMOS RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, Power Star®, POLARIS™ TOTAL RADIO™ and Ultimate Blue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark...