RF3855 Datasheet | RF Micro Devices

Features - Single 3.1V Supply Applications - L-BAND SAT Applications 1 16 15 14 13 VPD1 2 12 VCC1 MODE 3 11 VCC1 VPD2 4 10 VCC GND NC RF OUT RF OUT Functional Block Diagram Product Description The RF3855 is a high-power, high-efficiency linear amplifier IC targeting LBAND SAT Applications. The device is manufactured on an advanced Gallium Arsenide process, and has been designed for use as the final RF amplifier applications in the 1611MHz to 1618MHz band. The package is a 4mmx4mm, 16-pin QFN plastic package with backside ground. Ordering Information 3.1V Linear Power Amplifier DS110914 Optimum Technology Matching® Applied - Ga As HBT Si Ge Bi CMOS Ga As p HEMT Ga N HEMT Ga As MESFET Si Bi CMOS Si CMOS In Ga P HBT Si Ge HBT Si BJT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, Power Star®, POLARIS™ TOTAL RADIO™ and Ultimate Blue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 - For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.. 1 of 6 Absolute Maximum Ratings Parameter Supply Voltage Mode Voltage (VMODE) Control Voltage (VREG) Input RF Power Operating Case Temperature Storage Temperature Rating...