RF3855 Datasheet PDF - RF Micro Devices 3.1V LINEAR POWER AMPLIFIER Specs

RF3855 - 3.1V LINEAR POWER AMPLIFIER

Datasheet Summary

Description

The RF3855 is a high-power, high-efficiency linear amplifier IC targeting LBAND SATCOM Applications.

The device is manufactured on an advanced Gallium Arsenide process, and has been designed for use as the final RF amplifier applications in the 1611MHz to 1618MHz band.

Features

Single 3.1V Supply.

Datasheet Details

Part number	RF3855
Manufacturer	RF Micro Devices
File Size	169.94 KB
Description	3.1V LINEAR POWER AMPLIFIER
Datasheet	RF3855 Datasheet
Additional preview pages of the RF3855 datasheet.

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Full PDF Text Transcription

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RF38553.1 V Linear Power Amplifier RF3855 3.1V LINEAR POWER AMPLIFIER Package Style: QFN, 16-Pin, 4 x 4 GND RF IN NC NC NC Features  Single 3.1V Supply Applications  L-BAND SATCOM Applications 1 16 15 14 13 VPD1 2 12 VCC1 MODE 3 11 VCC1 VPD2 4 10 VCC 56789 GND NC RF OUT RF OUT GND Functional Block Diagram Product Description The RF3855 is a high-power, high-efficiency linear amplifier IC targeting LBAND SATCOM Applications. The device is manufactured on an advanced Gallium Arsenide process, and has been designed for use as the final RF amplifier applications in the 1611MHz to 1618MHz band. The package is a 4mmx4mm, 16-pin QFN plastic package with backside ground. Ordering Information RF3855 3.

Published: Mar 16, 2016 |