RF Micro Devices RF5144
The RF5144 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in 3V IS-95/CDMA20001X/ AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 824MHz to 849MHz band and 1850MHz to 1910MHz band. The RF5144 has a digital control line for low power applications to lower quiescent current.| Part No. | RF5144 |
|---|---|
| Datasheet | RF5144 Download |
| Manufacturer |  RF Micro Devices |
| Description | TRI-MODE POWER AMPLIFIER MODULE |
| Buy | Stock & Price |
APPLICATIONS
● 3V CDMA/AMPS Cellular Handset● 3V CDMA2000/1XRTT Cellular Handset
● 3V CDMA US-PCS Handset
● 3V CDMA2000/1XRTT US-PCS Handset RoHS Compliant & Pb-Free Product DUAL-BAND CDMA 800MHz/1900MHz TRI-MODE POWER AMPLIFIER MODULE Product
DESCRIPTION
4.0 -A-B- The RF5144 is assembled in a 24-pin, 4mmx4mm, QFN package. 1.00 0.80 0.10 C 4.0 0.10 C B 2 PL 0.10 C A 2 PL 0.2 C Shaded area indicates pin 1. Dimensions in mm. -C- 0.50 TYP 0.10 C A B 0.55 TYP 0.35 SEATING PLANE Scale: None 0.10 C 2.60 2 PL 2.40 0.05 TYP 0.00 0.203 TYP 0.08 C 0.30 TYP 0.18 0.10 M C A B TYP 0.08 0.03 0.50 TYP 0.30 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT VMODE PCS 9 Package Style: QFN, 24-Pin, 4x4 GaAs HBT SiGe HBT GaN HEMT VCC1 PCS VCC2 PCS VCC2 PCS GaAs MESFET Si CMOS SiGe Bi-CMOS VCC2 PCSFEATURES
● Input/Output Internally Matched@50 Ω● 28dBm Output Power
● 41% Peak Linear Efficiency for Cell Band 24 VREG - PCS 1 RF IN - PCS 2 VREG - CELL 3 VMODE - CELL 4 RF IN - CELL 5 VCC1 - CE...
