RF Micro Devices RF5176
The RF5176 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 3V CDMA-2000 and W-CDMA handsets as well as other applications in the 1850MHz to 2000MHz band. The device is self-contained, and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics over all recommended supply voltages.| Part No. | RF5176 |
|---|---|
| Datasheet | RF5176 Download |
| Manufacturer |  RF Micro Devices |
| Description | 3V W-CDMA POWER 1900MHZ/ 3V LINEAR POWER AMPLIFIER |
| Buy | Stock & Price |
APPLICATIONS
● 3V 1850-1910MHz CDMA-2000 Handsets● 3V 1920-1980MHz W-CDMA Handsets
● Spread-Spectrum Systems
● Commercial and Consumer Systems
● Portable Battery-Powered Equipment 2 POWER AMPLIFIERS Product
DESCRIPTION
The device has a continuously variable bias circuit to allow idle current to be optimized for a given output power. 1.00 0.90 0.60 0.24 typ 4.00 sq. 4 PLCS 0.65 0.30 3 0.20 2.10 sq. 12° MAX 0.05 Dimensions in mm. 0.75 0.50 0.50 Note orientation of package. 0.23 0.13 4 PLCS NOTES: 1 Shaded lead is Pin 1. 2 Pin 1 identifier must exist on top surface of package by identification mark or feature on the package body. Exact shape and size is optional. 3 Dimension applies to plated terminal: to be measured between 0.02 mm and 0.25 mm from terminal end. 4 Package Warpage: 0.05 mm max. 5 Die Thickness Allowable: 0.305 mm max. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü NC Package Style: LCC, 20-Pin, 4x4 GaAs HBT SiGe HBT GaAs MESFET Si CMOS RF INFEATURES
● Single 3...
