RF5187PCBA Datasheet | RF Micro Devices

Description The RF5187 is a highly-linear, low-power amplifier IC. It has been designed for use as the driver RF amplifier in applications such as W-CDMA basestations. The RF5187 requires an input and output matching network and power supply feed line. The device is manufactured on an advanced Gallium Arsenide HBT process, and is packaged in a 8-pin plastic package with a backside ground. 3.90 ± 0.10 -A0.43 ± 0.05 0.05 ± 0.05 Exposed Heat Sink 4.90 ± 0.10 1.27 6.00 ± 0.20 Dimensions in mm. 8° MAX 0° MIN 0.60 ± 0.15 0.22 ± 0.03 1.40 ± 0.10 2.70 ± 0.10 1.70 ± 0.10 NOTES: 1. Shaded lead is pin 1. 2. Lead coplanarity - 0.10 with respect to datum "A". Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü Package Style: SOIC-8 Slug Ga As HBT Si Ge HBT Ga As MESFET Si CMOS Features - Single 3V to 6V Supply - 10d Bm to 20d Bm Ultra Linear Output Power - 14d B Gain at 2.14GHz - Power Down Mode - 800MHz to 2500MHz Operation RF IN 1 RF IN 2 PC 3 VCC 4 PACKAGE BASE GND 8 RF OUT 7 RF OUT 6 RF OUT 5 RF OUT BIAS CIRCUIT Ordering Information RF5187 RF5187 PCBA Low Power Linear Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://.rfmd. Rev A1 011016 2-73 RF5187 Absolute Maximum Ratings Parameter Supply Voltage (VCC) Power Control Voltage (VPC) DC Supply Current Input RF Power Output Load VSWR Operating Ambient Temperature Storage Temperature Preliminary Rating -0.5 to +7.5 -0.5 to +5V 450 +20 20:1 -40 to +85 -40 to +100 Unit VDC V m A d Bm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described...