• Part: RF5622
  • Description: 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER
  • Manufacturer: RF Micro Devices
  • Size: 109.15 KB
Download RF5622 Datasheet PDF
RF Micro Devices
RF5622
RF5622 is 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER manufactured by RF Micro Devices.
.. Preliminary 3.0V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Ro HS pliant & Pb-Free Product Package Style: QFN, 8-Pin, 2x2x0.45mm Features - 8 - - - Single Power Supply 3.0V to 4.5V 30d B Typical Gain, Input Matched to 50 Ω 2.4GHz to 2.5GHz Frequency Range 11g POUT =+18d Bm@3% Typ EVM, 95m A IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications mercial and Consumer Systems Portable Battery-Powered Equipment Spread-Spectrum and MMDS Systems RF IN 1 Input Match Interstage Match 2Fo Filter VC1 7 6 VC2 VREG 2 Bias Circuit Power Detector 5 RF OUT 3 PDETECT 4 NC Applications - - Functional Block Diagram Product Description The RF5622 is a linear, medium-power, high-efficiency, two-stage amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and pact flash applications. The device is manufactured on an advanced In Ga P Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz OFDM and other spread-spectrum transmitters. The device is provided in a 2mmx2mm, 8-pin, QFN with a backside ground. The RF5622 is designed to maintain linearity over a wide range of supply voltage and power output. The RF5622 also has built-in power detector and incorporates the input and interstage matching ponents internally which reduces the ponent count used externally and makes it easier to incorporate on any design. Ordering Information RF5622 RF5622PCBA-41X 3.0V to 4.5V, 2.4GHz to 2.5GHz Linear Power Amplifier Fully Assembled Evaluation Board - - - Optimum Technology Matching® Applied Rev A2 DS071011 Ga As HBT Ga As MESFET In Ga P HBT Si Ge Bi CMOS Si Bi CMOS Si Ge HBT Ga As p HEMT Si CMOS Si...