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RF6100-4 - LINEAR POWER AMPLIFIER MODULE

General Description

1 3V 1900MHZ LINEAR POWER AMPLIFIER MODULE 1.40 1.25 0.800 1.000 TYP 0.000 0.600 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT 9 Package Style: Module (4mmx4mm) GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS

Key Features

  • Input/Output Internally Matched@50 Ω.
  • 28.5dBm Linear Output Power.
  • 39% Peak Linear Efficiency.
  • 28dB Linear Gain VCC1 1 RF IN 2 GND 3 VMODE 4 VREG 5 Bias 10 VCC2 9 GND 8 RF OUT 7 GND 6 GND.
  • -48dBc ACPR @ 1.25MHz Ordering Information RF6100-4 3V 1900MHz Linear Power Amplifier Module RF6100-4 PCBA Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA 3.000 The RF6100-4 is a.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com RF6100-4 0 Typical Applications • 3V CDMA US-PCS Handset • 3V CDMA2000/1XRTT US-PCS Handset • 3V CDMA2000/1X-EV-DO US-PCS Handset • Spread-Spectrum System Product Description 1 3V 1900MHZ LINEAR POWER AMPLIFIER MODULE 1.40 1.25 0.800 1.000 TYP 0.000 0.600 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT 9 Package Style: Module (4mmx4mm) GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Features • Input/Output Internally Matched@50 Ω • 28.5dBm Linear Output Power • 39% Peak Linear Efficiency • 28dB Linear Gain VCC1 1 RF IN 2 GND 3 VMODE 4 VREG 5 Bias 10 VCC2 9 GND 8 RF OUT 7 GND 6 GND • -48dBc ACPR @ 1.