RF Micro Devices RF6886
The RF6886 is a linear, high power, high efficiency amplifier designed to use as a final stage/driver in linear or saturated transmit applications. The device is manufactured on an advanced InGaP HBT process and is provided in a 24-pin leadless chip carrier with backside ground.RF6886 Specifications
- Package : QFN
- Min Voltage : 3V
- Max Voltage : 3.6V
- Frequency : 1GHz
- Max Power Dissipation : 5W
- Max Operating Temp : 85°C
- Min Operating Temp : -40°C
- Nominal Supply Current : 3.1A
Source:
Octopart
| Part No. | RF6886 |
|---|---|
| Datasheet | RF6886 Download |
| Manufacturer |  RF Micro Devices |
| Description | 100MHz TO 1000MHz LINEAR POWER AMPLIFIER |
| Buy | Stock & Price |
FEATURES
● 100MHz to 1000MHz● Single 3.6V Power Supply
● 34dBm OP1dB
● 36.5dBm Saturated Output Power
● >50% Efficiency
APPLICATIONS
● CDMA/GSM/EDGE Repeater Final Amplifier● 450MHz and 865MHz to 955MHz ISM Band Amplifier
● General Purpose High Power Amplifier
● TETRA Handheld/Walkie-Talkie Final Amplifier
● HPA Driver Vcc 1 24 Vcc 2 Vcc 3 NC 4 Vreg2 5 RFin 6 23 22 21 20 19 Bias 18 RFout 17 RFout 16 RFout 15 RFout 14 RFout 13 RFout 7 8 9 10 11 12 NC NC NC NC NC NC Functional Block Diagram Product
DESCRIPTION
External matching allows for use in standard bands from 100MHz to 1000MHz. DS140303 Ordering Information RF6886SR RF6886SQ RF6886TR7 RF6886TR13 RF6886PCK-410 RF6886PCK-411 7” Reel with 100 pieces Sample bag with 25 pieces 7” Reel with 750 pieces 13” Reel with 2500 pieces 865MHz to 955MHz PCBA with 5-piece sample bag 433MHz to 470MHz PCBA with 5-piece sample bag Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS S...
