RFMD0014 Datasheet | RF Micro Devices

Features - ACPR Performance: -70d Bc Typ. for 1-Carrier WCDMA - Very High Linearity: +26d Bm OIP3 - Very Low Noise Floor: -160 d Bm/Hz - High Output Power: +12d Bm P1d B - Typical Carrier Feed-Through: <-40 d Bm - Single-Ended or Differential LO Drive - Typical Sideband Suppression: <-40 d Bc - Single +5V Supply - Small 24-Pin, 4mmx4mm, QFN Applications - Cellular, 3G Infrastructure - Wi Bro, Wi Max, LTE - WLAN or WLL Systems - GMSK, QPSK, DQPSK, QAM Modulation Functional Block Diagram Product Description The RFMD0014 is direct quadrature modulator for use in cellular base stations and other munications systems. RFMD0014 supports cellular, 3G, Wi Max, and LTE air interface standards. This device features operation from 700MHz to 1000MHz with excellent carrier and sideband suppression and ultra low noise floor. The device is manufactured in an advanced Ga As HBT process. The RFMD0014 operates from a single 5V supply and is packaged in a low cost, 4mm x 4mm, 24-pin leadless package. DS100819 Optimum Technology Matching® Applied Ga As HBT - Ga As MESFET In Ga P HBT Si Ge Bi CMOS Si Bi CMOS Si Ge HBT Ga As p HEMT Si CMOS Si BJT Ga N HEMT RF MEMS LDMOS RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, Power Star®, POLARIS™ TOTAL RADIO™ and Ultimate Blue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 - For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.. 1 of 10 Absolute Maximum Ratings Parameter Supply Voltage LO Input Operating Temperature Storage Temperature Maximum Junction Temperature Power Dissipation BB CM Voltage Thermal Resistance ESD Rating 5.5 +10 -40 to +85 -65 to +150 +150 1200 1.8 28 Class 1C (1000V) Unit V d Bm °C °C °C m W V...