RF Micro Devices RFPA2189
The RFPA2189 is a single-stage GaAs HBT power amplifier specifically designed for Wireless Infrastructure applications. It offers ultra-linear operation at a comparably low DC power making it ideal for next generation radios requiring high efficiency. Its external matching allows for use across various radio platforms within 400 MHz to 2700MHz.FEATURES
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● -60dBc ACPR at 16dBm WCDMA 0.5W Output Power (P1dB) Excellent Linearity to DC Power Ratio NF=3.0dB at 880MHz Single-Supply 5V Operation Class 1C (1000V) HBM ESD
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● 1 RFIN 2 3
APPLICATIONS
● GaAs Pre-Driver for Base Station Amplifiers PA Stage for Commercial Wireless Infrastructure 2nd or 3rd Stage LNAs Class AB Operation for GSM, DCS, PCS, UMTS, WiMAX, LTE TransceiverAPPLICATIONS
GND RFOUT/VCC Functional Block Diagram●
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DESCRIPTION
The RFPA2189 offers low noise figure making it an excellent solution for 2nd and 3rd stage LNAs. Ordering Information RFPA2189SR RFPA2189SQ RFPA2189TR7 RFPA2189PCK-410 RFPA2189PCK-411 7” Reel with 100 pieces Sample bag with 25 pieces 7” Reel with 2500 pieces 869MHz to 894MHz PCBA with 5-piece sample bag 2110MHz to 2170MHz PCBA with 5-piece sample bag GaAs HBT GaAs MESFET InGaP HBT Optimum Technology Matching® Applied SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT LDMOS RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC.