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RFPA2226 Datasheet 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER

Manufacturer: RF Micro Devices (now Qorvo)

General Description

RFMD’s RFPA2226 is a high linearity single stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encapsulated package.

This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.

This product is specifically designed as a flexible final or driver stage for 802.16 and 802.11 equipment in the 2.2GHz to 2.7GHz bands.

Overview

RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA2226 2.2GHz TO 2.

Key Features

  • P1dB=33.5dBm at 5V, 2.4GHz.
  • 802.11g 54Mb/s Class AB Performance.
  • POUT=26dBm at 2.5% EVM, VCC 5V.
  • POUT=27dBm at 2.5% EVM, VCC 6V.
  • On-Chip Output Power Detector.
  • Input Prematched to ~5.
  • Proprietary Low Thermal Resistance Package.
  • Hand Solderable and Easy Rework.
  • Power Up/Down control.