Datasheet Details
| Part number | RFPA2226 |
|---|---|
| Manufacturer | RF Micro Devices (now Qorvo) |
| File Size | 673.36 KB |
| Description | 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER |
| Download | RFPA2226 Download (PDF) |
|
|
|
| Part number | RFPA2226 |
|---|---|
| Manufacturer | RF Micro Devices (now Qorvo) |
| File Size | 673.36 KB |
| Description | 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER |
| Download | RFPA2226 Download (PDF) |
|
|
|
RFMD’s RFPA2226 is a high linearity single stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encapsulated package.
This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.
This product is specifically designed as a flexible final or driver stage for 802.16 and 802.11 equipment in the 2.2GHz to 2.7GHz bands.
RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA2226 2.2GHz TO 2.
| Part Number | Description |
|---|---|
| RFPA2224 | Single-Stage Power Amplifier |
| RFPA2235 | Single-Stage Power Amplifier |
| RFPA2002 | Integrated Power Amplifier Module |
| RFPA2005 | Integrated Power Amplifier Module |
| RFPA2013 | GaAs HBT Power Amplifier |
| RFPA2016 | 3-stage HBT power amplifier module |
| RFPA2026 | 3-Stage Power Amplifier Module |
| RFPA2172 | medium-power high efficiency amplifier IC |
| RFPA2189 | GaAs HBT POWER AMPLIFIER |
| RFPA2545 | Broadband 4W GaAs HBT Power Amplifier |