Datasheet Details
| Part number | RFPA5026 |
|---|---|
| Manufacturer | RF Micro Devices (now Qorvo) |
| File Size | 640.22 KB |
| Description | class AB Heterojunction Bipolar Transistor (HBT) power amplifier |
| Datasheet | RFPA5026-RFMicroDevices.pdf |
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Overview: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: DFN, 6-pin, 5.59mm x 6.23mm x 0.
| Part number | RFPA5026 |
|---|---|
| Manufacturer | RF Micro Devices (now Qorvo) |
| File Size | 640.22 KB |
| Description | class AB Heterojunction Bipolar Transistor (HBT) power amplifier |
| Datasheet | RFPA5026-RFMicroDevices.pdf |
|
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RFMD’s RFPA5026 is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor (HBT) power amplifier.
It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal bination of low cost and high reliability.
This product is specifically designed for use as a driver or final stage power amp for 802.16 equipment in the 4.9GHz to 5.9GHz bands.
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