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RFPA5026 - class AB Heterojunction Bipolar Transistor (HBT) power amplifier

General Description

RFMD’s RFPA5026 is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor (HBT) power amplifier.

It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.

Key Features

  • P1dB=33dBm at 5V.
  • 802.11g 54Mb/s Class AB Performance.
  • POUT=25dBm at 2.5% EVM, VCC 5V, 680mA.
  • On-Chip Output Power Detector.
  • Input Prematched Input and Output.
  • Proprietary Low Thermal Resistance Package.
  • Power Up/Down control.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: DFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features  P1dB=33dBm at 5V  802.11g 54Mb/s Class AB Performance  POUT=25dBm at 2.5% EVM, VCC 5V, 680mA  On-Chip Output Power Detector  Input Prematched Input and Output  Proprietary Low Thermal Resistance Package  Power Up/Down control <1s Applications  802.16 WiMAX Driver or Output Stage  5GHz 802.11 WiFi and ISM Applications RFIN RFPA5026 Vbias Active Bias RFOUT Power Up/Down Control Power Detector Functional Block Diagram Product Description RFMD’s RFPA5026 is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor (HBT) power amplifier.