• Part: RFPA5026
  • Description: class AB Heterojunction Bipolar Transistor (HBT) power amplifier
  • Manufacturer: RF Micro Devices
  • Size: 640.22 KB
Download RFPA5026 Datasheet PDF
RF Micro Devices
RFPA5026
RFPA5026 is class AB Heterojunction Bipolar Transistor (HBT) power amplifier manufactured by RF Micro Devices.
RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: DFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features - P1dB=33dBm at 5V - 802.11g 54Mb/s Class AB Performance - POUT=25dBm at 2.5% EVM, VCC 5V, 680mA - On-Chip Output Power Detector - Input Prematched Input and Output - Proprietary Low Thermal Resistance Package - Power Up/Down control <1s Applications - 802.16 WiMAX Driver or Output Stage - 5GHz 802.11 WiFi and ISM Applications RFIN Vbias Active Bias RFOUT Power Up/Down Control Power Detector Functional Block Diagram Product Description RFMD’s RFPA5026 is a high-linearity, single-stage, class AB Heterojunction Bipolar...