RFPD3190 - Hybrid Power Doubler amplifier

Features

Excellent Linearity.
Superior Return Loss Performance.
Extremely Low Distortion.
Optimal Reliability.
Low Noise.
Unconditionally Stable Under All Terminations.
Extremely High Output Capability.
24.5dB Min. Gain at 1218MHz.
450mA Max. at 24VDC.

RF Micro Devices

Datasheet Details

Part number	RFPD3190
Manufacturer	RF Micro Devices
File Size	216.13 KB
Description	Hybrid Power Doubler amplifier
Datasheet	RFPD3190 Datasheet
Additional preview pages of the RFPD3190 datasheet.

📁 Similar Datasheet

RFP-10-100RV - Flanged Resistors (Anaren Microwave)
RFP-10-50TV - Flanged Terminations (Anaren Microwave)
RFP-10-50TVC - Flanged Terminations (Anaren Microwave)
RFP-10-50TVR - Flanged Terminations (Anaren Microwave)
RFP-100-100RW - Flanged Resistors (Anaren Microwave)
RFP-100-100RW-S - Flanged Resistors (Anaren Microwave)
RFP-100-10AE-S - Flanged Attenuators (Anaren Microwave)
RFP-100-10AE-S - Flanged Attenuators (Anaren Microwave)
RFP-100-1AE-S - Flanged Attenuators (Anaren Microwave)
RFP-100-20AE-S - Flanged Attenuators (Anaren Microwave)

Other Datasheets by RF Micro Devices

RFPD3020 - Hybrid Power Doubler amplifier
RFPD3210 - Hybrid Power Doubler amplifier
RFPD3220 - Hybrid Power Doubler amplifier
RFPD3540 - Hybrid Power Doubler amplifier module
RFPD3580 - Hybrid Power Doubler amplifier module
RFPD3890 - Hybrid Power Doubler amplifier module
RFPD2540 - Hybrid Power Doubler amplifier
RFPD2580 - Hybrid Power Doubler amplifier module

Full PDF Text Transcription

Click to expand full text

RFPD3190 GaAs/GaN Power Doubler Hybrid 45MHz to 1218MHz The RFPD3190 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT die and GaN HEMT die, has high output capability, and operates from 45MHz to 1218MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability.

Published: Mar 25, 2016 |