RF Micro Devices SGC-6489Z
SGC-6489Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SGC-6489Z does not require a dropping resistor as compared to traditional Darlington amplifiers.| Part No. | SGC-6489Z |
|---|---|
| Datasheet | SGC-6489Z Download |
| Manufacturer |  RF Micro Devices |
| Description | high performance SiGe HBT MMIC amplifier |
| Buy | Stock & Price |
DESCRIPTION
RFMD’s The SGC-6489Z product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is internally matched to 50. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS Gain and Return Loss 30.0 VD = 5V, ID = 85mA 20.0 S21 10.0 0.0 Bias Tee Data, ZS = ZL = 50 , TL -10.0 S22 -20.0 -30.0 S11 -40.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Frequency (GHz)FEATURES
● Single Supply Operation: 5V at ID = 85mA● No Dropping Resistor Required
● Patented Self Bias Circuitry
● Gain = 19.5dBm at 1950MHz
● P1dB = 19.2dBm at 1950MHz
● IP3 = 32.8dBm at 1950MHz
● Robust 1000V ESD, Class 1C HBM
APPLICATIONS
● PA Driver Amplifier● Cellular, PCS, GSM, UMTS
● IF Amplifier
● Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 20.7 22.2 23.7 dB 850MHz 18.0 19.5 21.0 dB 1950MHz 18.3 dB 2400MHz O...
