RF Micro Devices SGL0263Z
The SGL0263Z is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50GHz. This device has an internal temperature compensation circuit permitting operation directly from supply voltages as low as 2.5V. The SGL0263Z has been characterized at VD=3V for low power and 4V for medium power applications.| Part No. | SGL0263Z |
|---|---|
| Datasheet | SGL0263Z Download |
| Manufacturer |  RF Micro Devices |
| Description | high performance SiGe HBT MMIC amplifier |
| Buy | Stock & Price |
DESCRIPTION
Only two DCblocking capacitors, 2 input matching components, a bias resistor, and an optional RF choke are required for operation from 1400MHz to 2500MHz. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT Temperature Compensation Circuit RF In VS RF Out / VSFEATURES
● High Input/Output Intercept● Low Noise Figure: 1.3dB typ. at 1900MHz
● Low Power Consumption
● Single Voltage Supply Opera- tion
● Internal Temperature Com- pensation
APPLICATIONS
● Receivers, GPS, RFID● Cellular, Fixed Wireless, Land Mobile Parameter Specification (VS=3V) Min. Typ. Max. Specification (VS=4V) Min. Typ. Max. Small Signal Gain 12.1 13.4 14.7 13.8 12.5 12.9 10.8 11.3 Output Power at 1dB Compression 3.5 5.5 11.4 6.8 12.3 7.9 12.8 Input Third Order Intercept Point Tone Spacing=1MHz, POUT per tone = -13 dBm 7.5 9.5 15.1 13.5 16.8 15.5 18.4 Noise Figure 1.3 1.7 1.9 1.5 2.1 2.0 2.8 Input Return Loss 10.0 1...
