RF Micro Devices SGL0363Z
SGL0363Z is a low power, low noise amplifier. It is designed for 2.7V to 3.3V battery operation. The matching networks are implemented externally which allows for optimum narrow-band performance with 20dB typical gain and 1.1dB noise figure from 200MHz to 900MHz.| Part No. | SGL0363Z |
|---|---|
| Datasheet | SGL0363Z Download |
| Manufacturer |  RF Micro Devices |
| Description | LOW NOISE AMPLIFIER |
| Buy | Stock & Price |
DESCRIPTION
RFMD’s SGL0363Z is a low power, low noise amplifier. This RFIC uses the latest Silicon Germanium HBT process. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Simplified Device Schematic Vpc Gnd Active Bias Network Narrow-band Matching Network RF Out Narrow-band Matching RF In Network GndFEATURES
● Low Power Consumption, 5.7mA at 3.3V● External Input Noise Match
● High Gain and Low Noise, 20dB and 1.1dB respectively at 900MHz
● Operates from 2.7V to 3.3V
● Power Shutdown Capability using VPC
● 500V ESD, Class 1B
● Small Package: SOT-363
● High input overdrive capability, +18dBm
APPLICATIONS
● Low Power LNA for ISM, Cellular and Mobile Communications Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 21.0 dB 200MHz 18.0 20.0 22.0 dB 900MHz 15.0 16.5 18.5 dB 1575MHz Output Power at 1dB Compression 1.1 dBm 200 MHz 2.5 dBm 900 MHz 1.0 3.5 dBm 1575 MHz Output Thi...
