RF Micro Devices SPA1118Z
SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850MHz band.| Part No. | SPA1118Z |
|---|---|
| Datasheet | SPA1118Z Download |
| Manufacturer |  RF Micro Devices |
| Description | POWER AMPLIFIER |
| Buy | Stock & Price |
DESCRIPTION
RFMD’s Its high linearity makes it an ideal choice for wireless data and digital applications. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS VCC VBIAS RFIN N/C Active Bias Input Match N/C N/C RFOUT/ VCC N/CFEATURES
● High Linearity Performance● +21dBm IS-95 Channel Power at -55dBc ACP
● +48dBm OIP3 Typ.
● On-Chip Active Bias Control
● Patented High Reliability GaAs HBT Technology
● Surface-Mountable Plastic Package
APPLICATIONS
● Multi-CarrierAPPLICATIONS
● AMPS, ISMAPPLICATIONS
Parameter Frequency of Operation Output Power at 1dB Compression Adjacent Channel Power Small Signal Gain Input VSWR Output Third Order Intercept Point Noise Figure Device Current Device Voltage Thermal Resistance (junction-lead) Test Conditions: Z0=50 VCC=5V Specification Min. Typ. 810 29.5 -57.0 16.2 17.2 1.5:1 48.0 7.5 275 310 4.75 5.0 35 Temp = 25°C Max. 960 -54.0 18.2 330 5.25 °C/W Unit MHz dB...
