Datasheet Details
| Part number | SPA1118Z |
|---|---|
| Manufacturer | RF Micro Devices (now Qorvo) |
| File Size | 253.15 KB |
| Description | POWER AMPLIFIER |
| Datasheet | SPA1118Z-RFMicroDevices.pdf |
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Overview: SPA1118Z 850 MHz 1Watt Power Amplifier with Active Bias SPA1118Z 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8.
| Part number | SPA1118Z |
|---|---|
| Manufacturer | RF Micro Devices (now Qorvo) |
| File Size | 253.15 KB |
| Description | POWER AMPLIFIER |
| Datasheet | SPA1118Z-RFMicroDevices.pdf |
|
|
|
RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package.
These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850MHz band.
| Part Number | Description |
|---|---|
| SPA2118Z | POWER AMPLIFIER |
| SPA2318Z | POWER AMPLIFIER |