SPA1118Z - POWER AMPLIFIER

RF Micro Devices (now Qorvo)

General Description

RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package.

Key Features

High Linearity Performance.
+21dBm IS-95 Channel Power at -55dBc ACP.
+48dBm OIP3 Typ.
On-Chip Active Bias Control.
Patented High Reliability GaAs HBT Technology.
Surface-Mountable Plastic Package.

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SPA1118Z power amplifier by RF Micro Devices (now Qorvo) - Datasheet Preview

Datasheet Details

Part number	SPA1118Z
Manufacturer	RF Micro Devices (now Qorvo)
File Size	253.15 KB
Description	POWER AMPLIFIER
Datasheet	SPA1118Z Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPA1118Z 850 MHz 1Watt Power Amplifier with Active Bias SPA1118Z 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850MHz band. Its high linearity makes it an ideal choice for wireless data and digital applications.