Datasheet Details
| Part number | SPA2318Z |
|---|---|
| Manufacturer | RF Micro Devices (now Qorvo) |
| File Size | 382.52 KB |
| Description | POWER AMPLIFIER |
| Datasheet | SPA2318Z-RFMicroDevices.pdf |
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Overview: SPA2318ZLow Noise, High Gain SiGe HBT SPA2318Z 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8.
| Part number | SPA2318Z |
|---|---|
| Manufacturer | RF Micro Devices (now Qorvo) |
| File Size | 382.52 KB |
| Description | POWER AMPLIFIER |
| Datasheet | SPA2318Z-RFMicroDevices.pdf |
|
|
|
RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package.
These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1960MHz and 2140MHz bands.
| Part Number | Description |
|---|---|
| SPA2118Z | POWER AMPLIFIER |
| SPA1118Z | POWER AMPLIFIER |