SPA2318Z - POWER AMPLIFIER

Product Overview

RF Micro Devices

Datasheet Details

Part number	SPA2318Z
Manufacturer	RF Micro Devices
File Size	382.52 KB
Description	POWER AMPLIFIER
Datasheet	SPA2318Z Datasheet
Additional preview pages of the SPA2318Z datasheet.

Product details

Description

RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package.These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1960MHz and 2140MHz bands.Its high linearity makes it an ideal choic

Features

High Linearity Performance: +21dBm IS-95 Channel Power at -55dBc ACP; +20.7dBm WCDMA Channel Power at -50dBc ACP; +47dBm Typ. OIP3.
On-Chip Active Bias Control.
High Gain: 24dB Typ. at 1960 MHz.
Patented High Reliability GaAs HBT Technology.
Surface-Mountable Plastic Package.

📁 Similar Datasheet

SPA20N60C2 - Cool MOS Power Transistor (Infineon Technologies)
SPA20N60C3 - Cool MOS Power Transistor (Infineon Technologies)
SPA20N60C3 - N-Channel MOSFET (INCHANGE)
SPA20N60CFD - Power Transistor (Infineon Technologies)
SPA20N60CFD - N-Channel MOSFET (INCHANGE)
SPA20N65C3 - Cool MOS Power Transistor (Infineon Technologies)
SPA20N65C3 - N-Channel MOSFET (INCHANGE)
SPA21N50C3 - N-Channel MOSFET (INCHANGE)

Other Datasheets by RF Micro Devices

SPA2118Z - POWER AMPLIFIER
SPA1118Z - POWER AMPLIFIER

Published: Apr 1, 2016 |