Datasheet4U Logo Datasheet4U.com

SPF5344Z - GaAs pHEMT 2-STAGE LOW NOISE MMIC AMPLIFIER

General Description

The SPF5344Z is a high performance 2-Stage pHEMT MMIC LNA designed for use from 0.8GHz to 4GHz.

It offers low noise figure and high linearity in a gain block configuration.

Its single-supply operation and integrated matching networks make implementation remarkably simple.

Key Features

  • Low Noise Figure=0.80dB at 2.0 GHz.
  • Gain=24.5dB at 2.0GHz.
  • OIP3=39dBm at 2.0GHz.
  • Excellent Return Loss: S11>20dB, S22>20dB at 2.0 GHz.
  • P1dB=22.4dBm at 2.0GHz.
  • Single-Supply Operation: 5V at Idq = 120 mA.
  • Flexible Biasing Options: 3-5V, Adjustable Current.
  • Broadband Internal Matching.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SPF5001 Surface-mount 4-circuit Low-side Switch Array Sanken electric
SPF5002 Surface-mount 4-circuit Low-side Switch Array Sanken electric
SPF5002A Low-side Switch Sanken
SPF5003 High-side Power Switch Sanken electric
SPF5004 High-side Power Switch Sanken electric

Other Datasheets by RF Micro Devices (now Qorvo)

Part Number Description
SPF5122Z GaAs pHEMT LOW NOISE MMIC AMPLIFIER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SPF5344Z 0.8GHz to 4GHz, GaAs pHEMT 2Stage Low Noise MMIC Amplifier SPF5344Z 0.8GHz to 4GHz, GaAs pHEMT 2-STAGE LOW NOISE MMIC AMPLIFIER Product Description The SPF5344Z is a high performance 2-Stage pHEMT MMIC LNA designed for use from 0.8GHz to 4GHz. It offers low noise figure and high linearity in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. The off-chip interstage choke and DC block allow for optimum performance tuning. Gain, RL & NF versus Frequency dB Noise Figure (dB) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT  GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS 30 S21 20 10 0 NF -10 -20 S11 -30 -40 1.7 1.8 1.9 2.0 2.1 2.