SXE1089Z Datasheet | RF Micro Devices

SXE1089Z 0.05GHz to 3GHz, Cascadable p HEMT MMIC Amplifier 0.05GHz to 3GHz, CASCADABLE p HEMT MMIC AMPLIFIER Package: SOT-89 Product Description RFMD’s SXE1089Z is a high performance p HEMT MMIC amplifier utilizing a patented self-bias Darlington topology housed in a lowcost, surface mountable SOT-89 package. The active bias network provides stable cur- rent over temperature and process thereshold voltage variations. Designed to run directly from a 5V supply, the SXE1089Z does not require a dropping resistor as pared to typical Darlington amplifiers. The SXE1089Z product is designed for high linearity 5V gain block applica- tions that require small size and minimal external - Optimum Technology ponents. It is internally matched to 50. Matching® Applied Ga As HBT Ga As MESFET Gain and Return Loss T = 25°C In Ga P HBT S21 Si Ge Bi CMOS Si Bi CMOS 10.0 Note: Measured with Bias tees and deembedded to lead of device Si Ge HBT - Ga As p HEMT Si CMOS Si BJT Ga N HEMT In P HBT RF MEMS LDMOS (d B) -10.0 S22 -20.0 S11 -30.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Frequency (GHz) Features - Excellent ACP -65d Bc with 9.5d Bm Channel Power at 2140MHz - OIP3=38.5d Bm at 2140MHz - P1d B=22.6d Bm at 2140MHz - Gain=11.7d B at...