SZA3044Z Datasheet 1W POWER AMPLIFIER

Manufacturer: RF Micro Devices (now Qorvo)

SZA3044Z 1w power amplifier by RF Micro Devices (now Qorvo) - Datasheet Preview

Datasheet Details

Part number	SZA3044Z
Manufacturer	RF Micro Devices (now Qorvo)
File Size	375.30 KB
Description	1W POWER AMPLIFIER
Download	SZA3044Z Download (PDF)

General Description

RFMD’s SZA-3044 is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package.

This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.

This product is spe- cifically designed as a final or driver stage for 802.16 equipment in the 3.3GHz to 3.8GHz bands.

Overview

SZA3044Z 2.7GHz to 3.8GHz 5 V SZA3044Z1W 2.7GHz to 3.8GHz 5V 1W POWER AMPLIFIER Package: QFN, 4mmx4mm.

Key Features

an output power detector, Optimum Technology Matching® Applied on/off power control and high RF overdrive robustness. This product is available in a RoHS Compliant and Green package GaAs HBT with matte tin finish, designated by the “Z” package suffix. GaAs MESFET.
InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Features.
P1dB=31dBm at 5V.
802.11a 54Mb/s 2.5% EVM Per- formance.
POUT=24dBm, VCC=5V, 340mA, PAE 14.5%.
P.

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