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SZM-2066Z Datasheet 2w Power Amplifier

Manufacturer: RF Micro Devices (now Qorvo)

Overview: SZM-2066Z 2.4GHz to 2.7GHz 2W Power Ampli- SZM-2066Zfier 2.4GHz to 2.

General Description

RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package.

This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal bination of low cost and high reliability.

This product is specifically designed as a final or driver stage for 802.16 and 802.11b/g equipment in the 2.4GHz to 2.7GHz bands.

Key Features

  • an output power Optimum Technology detector, on/off power control and high RF overdrive robustMatching® Applied ness. A 20dB step attenuator feature can be utilized by switch- GaAs HBT ing the second stage Power up/down control. GaAs MESFET.
  • InGaP HBT Vcc = 5V SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS RFIN RFOUT Si BJT GaN HEMT Vbias = 5V Stage 1 Bias Stage 2 Bias Stage 3 Bias InP HBT RF MEMS LDMOS Pow er Up/Dow n Control Pow er Detector Features.
  • P1dB=.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Sirenza Microdevices Logo SZM-2066Z 2.4-2.7GHz 2W Power Amplifier Sirenza Microdevices

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SZM-2066Z Distributor