Description
(HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package.
Features
- an output power
Optimum Technology detector, on/off power control and high RF overdrive robustMatching® Applied ness. A 20dB step attenuator feature can be utilized by switch-
GaAs HBT
ing the second stage Power up/down control. GaAs MESFET.
- InGaP HBT
Vcc = 5V
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT Si CMOS
RFIN
RFOUT
Si BJT GaN HEMT
Vbias = 5V
Stage 1 Bias
Stage 2 Bias
Stage 3 Bias
InP HBT
RF MEMS LDMOS
Pow er Up/Dow n Control
Pow er Detector
Features.
- P1dB=.
SZM-2066Z Datasheet
