Description
RFMD’s SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package.
Features
- an output power detector, on/off power control, and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by switching the second stage Power up/down control. This product features a RoHS compliant and Green package with matte finish, designated by the “Z” suffix
Optimum Technology Matching® Applied
GaAs HBT GaAs MESFET.
- InGaP HBT
SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS
Vcc = 5V
RFIN
Vbias = 5V
Stage 1 Bias
Pow er Up/Dow n C.
SZM-2166Z Datasheet
