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SZM-3066Z Datasheet 2w Power Amplifier

Manufacturer: RF Micro Devices (now Qorvo)

Overview: SZM-3066Z 3.3GHz to 3.8GHz 2 W Power Ampli- SZM-3066Zfier 3.3GHz to 3.

General Description

RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package.

This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal bination of low cost and high reliability.

This product is specifically designed as a final or driver stage for 802.16 equipment in the 3.3GHz to 3.8GHz bands.

Key Features

  • an output power detector, on/off power control and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by switching the second stage Power up/down control. This product features a RoHS compliant and Green package with matte tin finish, designated by the ‘Z’ suffix. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET.
  • InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Features.
  • P1dB=33.5dBm at 5V.
  • Three Stages of.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Sirenza Logo SZM-3066Z 2W Power AMplifier Sirenza

More Datasheets from RF Micro Devices (now Qorvo)

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SZM-3166Z 2W POWER AMPLIFIER
SZM-2066Z 2W POWER AMPLIFIER
SZM-2166Z 2W POWER AMPLIFIER
SZM-5066Z HIGH POWER LINEAR POWER AMPLIFIER

SZM-3066Z Distributor