RF Micro Devices SZM-3066Z
SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a final or driver stage for 802.16 equipment in the 3.3GHz to 3.8GHz bands.| Part No. | SZM-3066Z |
|---|---|
| Datasheet | SZM-3066Z Download |
| Manufacturer |  RF Micro Devices |
| Description | 2W POWER AMPLIFIER |
| Buy | Stock & Price |
DESCRIPTION
RFMD’s It can run from a 3V to 6V supply. The external output match and bias adjustability allows load line optimization for other applications or over narrower bands. It features an output power detector, on/off power control and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by switching the second stage Power up/down control. This product features a RoHS compliant and Green package with matte tin finish, designated by the ‘Z’ suffix. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMSFEATURES
● P1dB=33.5dBm at 5V● Three Stages of Gain:34dB
● 802.11g 54Mb/s Class AB Per- formance
● POUT=26dBm at 2.5% EVM, VCC 5 V,730 mA
● Active Bias with Adjustable Cur- rent
● On-Chip Output Power Detector
● Low Thermal Resistance
● Power Up/Down Control <1μs
● Attenuator Step 20dB at VPC2 = 0 V
● Class 1B ESD Rating
APPLICATIONS
● 802.16 WiMAX Driver or Output Stage● Fixed Wireless, WLL Parameter Specification Min.
