TA0012 Description
TA0012 TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier RF Micro Devices introduces a new power amplifier for GSM applications based on revolutionary HBT (Heterojunction Bipolar Transistor) technology. This power amplifier operates from a single 4.8V or 6V power supply without the need for a negative voltage.