TA0012
TA0012 is High Efficiency HBT GSM Power Amplifier manufactured by RF Micro Devices.
TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier
RF Micro Devices introduces a new power amplifier for GSM applications based on revolutionary HBT (Heterojunction Bipolar Transistor) technology. This power amplifier operates from a single 4.8V or 6V power supply without the need for a negative voltage. The power output at 4.8V is 35dBm, and at 6V the PA provides 36dBm! The overall efficiency is as high as 62 percent. On-board power control is included, as is power down. The part is packaged in an industry standard 16-lead SOIC with 4 fused, wide leads. efficiency is extremely important....
