RFW1960-10 Overview
The power amplifier module is designed for base stations and cell extenders and operating frequency range is from 300MHz to 2.3GHz GaAs HFET is used and attached on a copper sub carrier. using bias and in/out matching circuit method with gold wire bonding. The bias and matching circuit are designed much simpler than other circuits for silicon IC’s, LDMOS because GaAs HFET is operated by low supply voltage whereas...
RFW1960-10 Key Features
- Small size by using simple matching circuit board
- Single Supply Voltage
- Heat sink 99.9% copper, gold plated
- High Productivity
- Low Manufacturing Cost
- GaAs HFET
- USPCS Repeater
- RF Sub-Systems
- Base Station
- CDMA : 1.25MHz symbol rate ; Forward Link ; 9 Channels, Multi tone Available @ ±885KHz and ±1.98MHz offset in 30KHz reso