Datasheet Details
| Part number | RT550PD |
|---|---|
| Manufacturer | RFHIC |
| File Size | 166.74 KB |
| Description | Power Transistor |
| Datasheet | RT550PD_RFHIC.pdf |
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Overview: Power Transistor Product.
| Part number | RT550PD |
|---|---|
| Manufacturer | RFHIC |
| File Size | 166.74 KB |
| Description | Power Transistor |
| Datasheet | RT550PD_RFHIC.pdf |
|
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The RT550PD is designed for base stations and cell extenders as 300MHz ~ 3GHz.
Absolute Maximum Ratings Parameter Drain - Source Voltage Gate - Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol Vds Vgs Pt Tstg Tch Rating +12 -5V~0V 37 -65 ~ +200 175 Unit V V W ℃ ℃ Electrical Characteristics (Ta=+25℃) Parameter Saturated Drain Current Transconductance Pinch-off Voltage Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain Output Power @ 1dB G.C.P Linear Power Gain Power added efficiency @ 1dB Thermal Resistance (Channel to Case) Symbol Idss gm Vp Bvgs Bvgd P1dB GLP ηadd Rth Test Conditions Vds=3V, Vgs=0V Vds=3V, Ids=3600mA Vds=3v, Ids=360mA Min 5000 Typ 3300 Max 6700 Unit mA mS -1.6 -20 -20 -1.9 -3.5 -25 -25 V V V dBm dB % Vds=9V, Id=2.4A F=2.3GHz 39 40 10 40 4.0 4.5 ℃/W ▪ Tel : 82-31-250-5011 ▪ rfsales@rfhic.
▪ All specifications may change without notice.
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