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RTP21050-10 - GaN-SiC Pallet Amplifier

Description

The RTP21050-10 is designed for RF system application frequencies from 2110MHz to 2170MHz, with high gain.

This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high efficiency.

Features

  • Doherty amplifier design.
  • GaN on SiC HEMT.
  • Small and light weight.
  • 50 Ohm Input/Output impedance matched.
  • Highly reliable and rugged design.
  • High efficiency, High Gain.
  • 50W typical PAVG.

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Datasheet Details

Part number RTP21050-10
Manufacturer RFHIC
File Size 252.53 KB
Description GaN-SiC Pallet Amplifier
Datasheet download datasheet RTP21050-10 Datasheet

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Full PDF Text Transcription

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Preliminary GaN-SiC Pallet Amplifier RTP21050-10 Product Features • Doherty amplifier design • GaN on SiC HEMT • Small and light weight • 50 Ohm Input/Output impedance matched • Highly reliable and rugged design • High efficiency, High Gain • 50W typical PAVG Application • WCDMA & LTE DPD amplifier • General purpose RF amplifier Description The RTP21050-10 is designed for RF system application frequencies from 2110MHz to 2170MHz, with high gain. This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high efficiency. The RTP21050-10 is a multi-tone and multi-band DPD application amplifier.
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