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RWP25020-50 - Wideband Power Amplifier

Description

The power amplifier module is designed for General Purpose.

Operating frequency range is from 2000 ~ 3000MHz Gallium Nitride on SiC technology is used and attached on an aluminum sub carrier.

Full in/out matching for broadband performance is already applied.

Features

  • GaN on SiC Broadband High Power Amplifier.
  • 2000 ~ 3000MHz Operation Bandwidth.
  • Small Signal Gain 22dB min.
  • 20W Minimum, P3dB RWP25020-50.

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Datasheet Details

Part number RWP25020-50
Manufacturer RFHIC
File Size 723.41 KB
Description Wideband Power Amplifier
Datasheet download datasheet RWP25020-50 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Wideband Power Amplifier Product Features • GaN on SiC Broadband High Power Amplifier • 2000 ~ 3000MHz Operation Bandwidth • Small Signal Gain 22dB min. • 20W Minimum, P3dB RWP25020-50 Applications • General Purpose • Telecommunication Description Package Type : DP-75 The power amplifier module is designed for General Purpose. Operating frequency range is from 2000 ~ 3000MHz Gallium Nitride on SiC technology is used and attached on an aluminum sub carrier. Full in/out matching for broadband performance is already applied. Improved thermal handling by patented technology. Electrical Specifications @ VCC = 28V; T = 25°C; ZS = ZL = 50Ω PARAMETER Bandwidth UNIT MHz MIN 2000 TYP - Power Gain dB 21 22 Gain Flatness dBp-p - ±1 Gain Variation vs Temperature dB -2.
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