RFMD RF3189
The RF3189 is a high power, high linearity performance in EDGE mode, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50 . The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, which is designed to operate either in saturated mode for GMSK signaling or linear mode for 8PSK signaling.| Part No. | RF3189 |
|---|---|
| Datasheet | RF3189 Download |
| Manufacturer |  RFMD |
| Description | QUAD-BAND GSM/EDGE/GSM850/EGSM900/DCS/PCS/POWER AMPLIFIER MODULE |
| Buy | Stock & Price |
FEATURES
● Linear EDGE and GSM Operation● High Gain for use in Systems with Low RF Driver Power
● Typical GMSK Efficiency GSM850/900 48/53% DCS/PCS 50/53%
● Auto VBATT Tracking Circuit avoids Switching Transients at Low Supply Voltage
● Low Power Mode for Reduced EDGE Current
● Digital Bias Control: Simple Implementation of Low Power Mode
● Integrated Power Flattening Circuit Reduces Power and Current into Mismatch
● Integrated VRAMP Rejection Filter Eliminates External Components
APPLICATIONS
● Quad-Band GSM/EDGE Handsets● GSM/EDGE Transmitter Line-ups
● Portable Battery-Powered Equipment
● GSM850/EGSM900/DCS/ PCS Products
● GPRS Class 12 Compatible Products
● Mobile EDGE/GPRS Data Products BAND SEL 2 TX EN 3 VBATT 4 VMODE 5 VRAMP / VBIAS 6 GSM RFIN 7 GND 8 Integrated Power Control 9 GSM RFOUT Functional Block Diagram Product
DESCRIPTION
The input and output terminals are internally matched to 50. The module is designed to be the final amplification stage in a dual-mode GSM/EDGE mobile transmit lineup operating in the 824MHz to 915MHz (low) and 1710MHz to 1910MHz (high) bands (such as a cellular handset).
