RFMD RFGA2012
The RFGA2012 is specifically designed to achieve high OIP3 with minimal DC power. The RFGA2012 features a VBIAS pin that allows users to optimize the quiescent current for specific requirements. The VBIAS pin also serves as a power-down pin.| Part No. | RFGA2012 |
|---|---|
| Datasheet | RFGA2012 Download |
| Manufacturer |  RFMD |
| Description | InGaP HBT LOW POWER LINEAR AMPLIFIER |
| Buy | Stock & Price |
FEATURES
● High OIP3=35dBm at 1960MHz● Low DC Power: 3.3V, 23mA
● Low NF = 1.6dB at 1960MHz
● 50MHz to 3000MHz Operation
● Power Down Capability
● Class 1C (1000V) HBM ESD Rating
● MSL 1 Rating
● Common Platform Compatible
APPLICATIONS
● Low Power Linear Gain Stage● IF, Cellular, DCS, PCS, UMTS, WLAN, WiMax, TD-SCDMA, LTE Amplifiers
● Low Power LNA NC 1 RFIN 2 GND 3 NC 4 AMP 8 VBIAS 7 RFOUT/VCC 6 NC 5 GND Functional Block Diagram Product
DESCRIPTION
Ultra-linear performance has been demonstated in standard frequency bands within 150MHz to 3GHz. The VBIAS pin also serves as a power-down pin. The RFGA2012 offers 1000V HBM ESD ruggedness and is manufactured using RFMD's InGaP HBT process to minimize Beta process variation. DS110215 Ordering Information RFGA2012SR RFGA2012SQ RFGA2012TR7 RFGA2012TR13 RFGA2012PCK-410 RFGA2012PCK-411 7” Reel with 100 pieces 25-piece sample bag 7” Reel with 750 pieces 13” Reel with 2500 pieces 1800MHz to 2200MHz PCBA with 5-piece sample bag 2600MHz to 2700MH...
