RFHA1025 Datasheet | RF Micro Devices

RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features - Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Supports Multiple Pulse Conditions 10% to 20% Duty Cycle 100s to 1ms Pulse Width Integrated Matching ponents for High Terminal Impedances - - - - - RF IN VG Pin 1 (CUT ) RF OUT T VD Pin 2 G GND B BASE - - 50V Operation Typical Performance - - Functional Block Diagram - - - Output Pulsed Power 280W Pulse Width 100S, Duty Cycle 10% Small Signal Gain 17dB High Efficiency 55% -40°C to 85°C Operating Temperature Product Description The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high power density gallium nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package. The RFHA1025 is a matched power transistor packaged in a hermetic, flanged ceramic package. The package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is acplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier. .DataSheet.net/ Applications - - Radar Air Traffic Control and Surveillance General Purpose Broadband Amplifiers - Ordering Information RFHA1025S2 RFHA1025SB RFHA1025SQ RFHA1025SR RFHA1025TR13 RFHA1025PCBA-410 2-Piece sample bag 5-Piece bag 25-Piece bag 50 Pieces on 7” short reel 250 Pieces on 13” reel...