RFMD RFUV1003
RFUV1003 is a 12GHz to 16GHz GaAs pHEMT upconverter, incorporating an integrated LO buffer amplifier, a Balanced Single Side Band (Image rejection) mixer followed by Variable Gain Amplifier, DC decoupling capacitors. The combination of high performance part and low cost packaging makes the RFUV1003 a cost effective solution, ideally suited to both current and next generation Point-to-Point and VSAT applications. RFUV1003 is packaged in a 5mm x 5mm QFN to simplify both system level board design and volume assembly.| Part No. | RFUV1003 |
|---|---|
| Datasheet | RFUV1003 Download |
| Manufacturer |  RFMD |
| Description | 12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER |
| Buy | Stock & Price |
FEATURES
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● RF Frequency: 12GHz to16GHz LO Frequency: 8GHz to 20GHz IF Frequency: DC to 4GHz Conversion Gain (Max): 23dB Conversion Gain (Min): -10dB NF (Max. Gain): 11dB NF (Min. Gain): 17dB OIP3 (Max. Gain): +28dBm OIP3 (Min. Gain): +12dBm Image Rejection: 20dBc Point to point VSAT 22 VLPA1,2 21 Vc1 20 N/C 19 N/C 18 N/C 17 Vc2 VLOA2 VMPA N/C GND RFOUT GND N/C PACKAGE GND Functional Block Diagram
APPLICATIONS
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DESCRIPTION
RFMD's Ordering Information RFUV1003S2 RFUV1003SB RFUV1003SQ RFUV1003SR RFUV1003TR7 RFUV1003TR13 RFUV1003PCK-410 2-piece sample bag 5-piece bag 25-piece bag 100 pieces on 7” reel 750 pieces on 7” reel 2500 pieces on 13” reel Evaluation board with 2-piece sample bag Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT LDMOS RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC.
