SBA5089Z - CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER

Description

RFMD’s SBA5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier.

A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal performance.

Features

IP3=34.0dBm at 1950MHz.
POUT=13.0dBm at -4.

RFMD

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Datasheet Details

Part number	SBA5089Z
Manufacturer	RFMD
File Size	299.87 KB
Description	CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER
Datasheet	SBA5089Z Datasheet
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SBA5089ZSBA5089Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description RFMD’s SBA5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.

Published: Sep 15, 2018 |