SBA5089Z Datasheet | RF Micro Devices

SBA5089ZSBA5089Z DCto5GHz, CASCADABLE In Ga P/Ga As HBT MMIC AMPLIFIER Package: SOT-89 Product Description RFMD’s SBA5089Z is a high performance In Ga P/Ga As Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with In Ga P process technology provides broadband performance up to 5GHz with excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Optimum Technology Matching® Applied Ga As HBT Ga As MESFET - In Ga P HBT Si Ge Bi CMOS Si Bi CMOS Si Ge HBT Ga As p HEMT Si CMOS Si BJT Ga N HEMT In P HBT RF MEMS LDMOS 30 20 10 0 -10 -20 -30 -40 Gain & Return Loss S21 S22 S11 1234 Frequency (GHz) Features - IP3=34.0d Bm at 1950MHz - POUT=13.0d Bm at...