RFMD SBA5089Z
SBA5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. The heterojunction increases breakdown voltage and minimizes leakage current between junctions.| Part No. | SBA5089Z |
|---|---|
| Datasheet | SBA5089Z Download |
| Manufacturer |  RFMD |
| Description | CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER |
| Buy | Stock & Price |
DESCRIPTION
RFMD’s A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal performance. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS 30 20 10 0 -10 -20 -30 -40 0 Gain & Return Loss S21 S22 S11 1234 Frequency (GHz) 5 6FEATURES
● IP3=34.0dBm at 1950MHz● POUT=13.0dBm at -4
