RFMD SBB1089Z
SBB1089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SBB1089Z does not require a dropping resistor as compared to typical Darlington amplifiers.| Part No. | SBB1089Z |
|---|---|
| Datasheet | SBB1089Z Download |
| Manufacturer |  RFMD |
| Description | CASCADABLE |
| Buy | Stock & Price |
DESCRIPTION
RFMD’s The SBB1089Z product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is internally matched to 50. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS dB Gain and Return Loss versus Frequency (w/ App. Ckt.) 35 25 S21 S11 S21 S22 15 5 -5 S11 -15 -25 -35 50 S22 150 250 350 450 550 650 750 850 Frequency (MHz)FEATURES
● OIP3=43.1dBm at 240MHz● P1dB=19.6dBm at 500MHz
● Single Fixed 5V Supply
● Robust 1000V ESD, Class 1C
● Patented Thermal Design and Bias Circuit
● Low Thermal Resistance
APPLICATIONS
● Receiver IF Amplifier● Cellular, PCS, GSM, UMTS
● Wireless Data, Satellite Terminals Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 15.5 dB 70MHz 14.0 15.5 17.0 dB 240MHz 14.0 15.5 17.0 dB 400MHz Output Power at 1dB Compression 19.0 dBm 70 MHz 19.0 dBm 240 MHz 18.0 19.0 dBm...
