SBB5089Z Datasheet | RF Micro Devices

50MHz to 6000MHz, CASCADABLE ACTIVE BIAS In Ga P HBT MMIC AMPLIFIER Package: SOT-89 Product Description RFMD’s SBB5089Z is a high performance In Ga P HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SBB5089Z does not require a dropping resistor as pared to typical Darlington amplifiers. The SBB5089Z product is designed for high linearity 5V gain block applications that require small size and minimal external ponents. It is internally matched to 50. Optimum Technology Matching® Applied Ga As HBT Ga As MESFET - In Ga P HBT Si Ge Bi CMOS Si Bi CMOS Si Ge HBT Ga As p HEMT Si CMOS Si BJT Ga N HEMT RF MEMS Gain and Return Loss (d B) Gain and Return Loss versus Frequency (with Bias Tees) -10.0 -20.0 25C -30.0 25C 25C -40.0 Frequency (GHz) Features - Wideband Flat Gain to 4GHz: ±1.1 d B - P1d B=20.4d Bm at 1950MHz - Single Fixed 5V Supply - Robust 1000V ESD, Class 1C - Patented Thermal Design and Bias Circuit - Low Thermal Resistance Applications - PA Driver Amplifier - Cellular, PCS, GSM, UMTS - Wideband...