DESCRIPTION
A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. FEATURES
High Gain: 14dB at 1950MHz Cascadable 50Ω Operates from Single Supply Low Thermal Resistance Package Gain (dB) Return Loss (dB) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS 9 SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Gain & Return Loss vs. Freq. @TL=+25°C 24 18 GAIN 12 IRL ORL 6 0 0 1 2 3 4 Frequency (GHz) 0 -10 -20 -30 -40 5 APPLICATIONS
PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 13.5 15.0 16.5 dB 850 MHz 14.0 dB 1950 MHz 12.6 dB 2400 MHz Output Power at 1dB Compression...
RFMD
